Sequential self-limiting growth of CuO on MgO(100) by chemical vapor deposition

Abstract

Sequential self-limiting growth by chemical vapor deposition is demonstrated for CuO(111) on MgO(100) for the first time by supplying CuCl and O 2/H 2O alternately. When the CuCl supply duration in a growth cycle is increased, the grown thickness per cycle saturates at 2.0–2.2 Å, which is close to the monolayer thickness of CuO (2.32 Å) in the [111] direction. This suggests that near monolayer growth occurs in each supply cycle by the self-limiting growth mechanism.