Abstract
Self-generated chaotic current fluctuations in the post-breakdown regime of a n-GaAs layer at 4.2 K have been analyzed in detail. Without an external magnetic field only regular oscillations were observed. Increasing the magnetic field strength up to 100 mT generates a sequence of quasiperiodic and frequency-locking current oscillations and finally a Ruelle-Takens-Newhouse scenario with chaos. This may be understood by assuming two coupled oscillatory processes caused by dielectric relaxation and energy relaxation in the distribution of free carriers.
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