Abstract
The photocurrent spectra induced by the anomalous Hall effect (AHE) of the (001)-oriented GaAs/AlGaAs quantum wells (QWs) with well width of 3 and 7nm have been investigated at room temperature. Ultra-thin InAs layers with a thickness of 1 monolayer have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry of the QWs. It is demonstrated that the AHE current can be effectively tuned by the inserted ultra-thin InAs layers and by the well width. A method has been proposed to separate the intrinsic and extrinsic mechanisms of the AHE, which can be also applied to spin Hall effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
