Separation of Individual Thermal Double‐Donor Levels by Laplace Deep‐Level Transient Spectroscopy

Abstract

Thermal double donors (TDDs) are created by heat treatment of Czochralski‐grown Si at temperatures around 450 °C. A family of individual defects with very similar donor (TDDn0/+ with n = 0–16) and double‐donor (TDDn+/++) levels is known today. The close‐level positions of the individual TDDs result in broad and asymmetric deep‐level transient spectroscopy (DLTS) peaks. Herein, Laplace DLTS are used to study this asymmetry. Several well‐separated Laplace DLTS peaks are resolved in our samples. Metastable properties of the TDDs are taken as advantages to identify the double‐donor levels (++/+) of TDD0, TDD1, and TDD2.