Abstract
AbstractPhotocatalytic activities of metal loaded CdS and p‐GaP semiconductor powders were measured for ammonia production from aqueous N−3 solution and hydrogen evolution from ethanol‐water mixture. The higher activity was obtained for the CdS loaded with the metal having a higher work function. On the other hand, the metal‐loading on p‐GaP powders showed a slight increase in the activity with loading lower work function metals. The numerical calculation for two‐dimensional Poisson equation shows that the electric field gradient is formed around the metal spots. This field gradient causes electrons to be captured by the metal, and holes to be collected on the semiconductor‐solution interface between the metal spots.
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