Abstract
An encapsulation method using the separation of low melting point alloy (LMPA) and a polymer from an LMPA-polymer mixture is proposed. Sn-Bi alloy and epoxy were used for the mixture. Separation was conducted using a two-step heat treatment of 160 °C for 5 min and 180 °C for 5 min. We found that the flux contained in the Sn-Bi solder played an important role in the separation process. A Cu sacrificial layer was introduced using the sputtering method under the Sn-Bi layer with thickness variations of 1500, 3000, and 6000 A. Using the 6000-A-thick Cu layer, the LMPA formed a well-separated and continuous sealing line. This double-line structure shows good potential for use as a sealing line for organic light-emitting diode encapsulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Components, Packaging and Manufacturing Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
