Abstract
InGaAsP/InP laser heterostructures with two stressed quantum wells operating in the wavelength range 1.3–1.55 μm were obtained by VPE of organometallic compounds. An optical emission power of 2.4 W was reached for the laser diodes with 100-μm wide strips operated in the continuous lasing mode at 20°C. A minimum threshold current density was 260 A/cm2. A differential quantum efficiency ηd= 40% was obtained with a 1.9-mm-long Fabry-Perot resonator. The internal optical losses of the heterostructures are reduced to 2.6–4.2 cm−1.
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