Separated AlxIn1−xN quantum dots grown by plasma-reactive co-sputtering

Abstract

Separated AlxIn1−xN quantum dots (QDs) embedded in amorphous AlN films have been produced by radio-frequency co-sputtering technique on silicon (111) and quartz glass substrates. The mean size and density of AlxIn1−xN QDs can be conveniently monitored by deposition parameters. Transparent electron microscope, and X-ray diffraction were used to detect the structure of the AlxIn1−xN QDs system; field-emission scanning-electron microscope was adopted to measure the surface morphology and anticipate the size of the QDs; X-ray photoelectronic spectroscopy was used to measure the stoichiometric ratios of the QDs.