Abstract

The work is aimed at the study of surface processes on the dynamically deformed adsorbed surface of semiconductors, which will be used as a sensitive substrate in radiometric temperature sensors. The choice of semiconductors with a zinc blende structure is explained by the sensitivity of such electronic subsystem to the deformation of the crystal lattice, which can be caused by the self-consistent redistribution of defects, inconsistency of the parameters of the crystal lattice, or external factors, for example, the influence of mechanical or electric fields. Based on established regularities of the influence of the concentration and type of adsorbed atoms on the spectrum of surface electronic states and the distribution of electron density on the dynamically deformed adsorbed surface of a single crystal, the development of a new class of intelligent sensors with increased accuracy of measuring the concentration of adsorbed atoms and temperature on surface acoustic waves is proposed. Such a new approach is based on the self-consistent effect of the deformation of the crystal lattice on the dispersion law and the spectral width of the phonon mode, the electric charge density, and the energy displacement of the edges of the allowed zones. It is calculated the temperature-concentration coefficient of the resonance frequency of the surface acoustic wave and the regularities of its change depending on the concentration of adsorbed atoms are established. The relevance of this research is determined both by the needs of fundamental research and by applied aspects of development, optimization and cost reduction of the process of designing and creating devices, the functioning of which is carried out on surface acoustic waves.

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