Abstract
Terminal current in a device increases when energetic carriers create additional carriers by impact ionization. Okuto and Crowell suggested an empirical model for describe this phenomenon. In this paper, Monte Carlo techniques were used to observe the effect of variability in the impact ionization coefficients on the results obtained from a computational model for electrons and holes transport. The model was implemented in FEM simulation tool, in order to study avalanche current in a MOSFET including uncertainty of the impact ionization coefficients of material.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
