Abstract
Near‐infrared (NIR) light emitting diodes (LEDs) with the emission wavelength over 900 nm are useful in a wide range of optical applications. Narrow bandgap NIR emitters have been widely investigated using organic compounds and colloidal quantum dots. However, intrinsically low charge mobility and luminescence efficiency of these materials limit improvement of the external quantum efficiency (EQE) of NIR LEDs, which is far from practical applications. Herein, a highly efficient NIR LED is demonstrated, which is based on an energy transfer from wide bandgap all inorganic perovskite (CsPbCl3) to ytterbium ions (Yb3+) as an NIR emitter doped in the perovskite crystalline film. High mobility of electrically excited carriers in the perovskite crystalline film provides a long carrier diffusion and enhances radiative recombination of an emission center due to minimized charge trapping losses, resulting in high EQE value in LEDs. The NIR emission of Yb3+ at around 1000 nm is found to be sensitized by CsPbCl3 thin film with a photoluminescence quantum yield over 60%. The LED based on Yb3+‐doped CsPbCl3 film exhibits a high EQE of 5.9% with a peak wavelength of 984 nm, achieved by high carrier transporting ability and effective sensitized emission property in the solid‐film structure.
Highlights
Near-infrared (NIR) light emitting diodes (LEDs) with the emission intrinsically low luminescence efficiency leaves these NIR emitting matewavelength over 900 nm are useful in a wide range of optical applicarials far from practical applications
Demonstrated, which is based on an energy transfer from wide bandgap all organic NIR LEDs, especially inorganic perovskite (CsPbCl3) to ytterbium ions (Yb3+) as an NIR emitter doped in the perovskite crystalline film
The NIR emistunable luminescence, high quantum effision of Yb3+ at around 1000 nm is found to be sensitized by CsPbCl3 thin film with a photoluminescence quantum yield over 60%
Summary
Near-infrared (NIR) light emitting diodes (LEDs) with the emission intrinsically low luminescence efficiency leaves these NIR emitting matewavelength over 900 nm are useful in a wide range of optical applicarials far from practical applications. Emitting device, not based on QDs but using a solution-processed film of all-inorganic perovskite (CsPbCl3) both as a sensitizer to NIR-emitting ytterbium ions (Yb3+) and a highmobility matrix, to the level close to 6%. QDs or organic semiconductor-based LEDs, a bulk crystalline film of perovskite provides a long carrier diffusion length and enhances radiative recombination of an emission center due to minimized charge trapping losses,[32] resulting in higher EQE
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
