Abstract
Surface States on ZnO have been investigated through their effect on photoconductivity. Low energy photons (0·7 ∼ 1·5 eV) are found to induce a feeble photocurrent in ZnO which is attributable to the direct electron injection from surface levels to the conduction band. A definite correlation has been found between the i.r. induced photocurrent and the intrinsic or the dye sensitized photocurrent excited by UV or visible radiation. It is proposed that phthalic anhydride on ZnO modifies the distribution of surface levels, by a chemical interaction with chemisorbed oxygen. Surface levels originating in chemisorbed oxygen ions are transformed by phthalic anhydride into new levels which are shallower but thermally more stable. These traps are found to enhance the photoconductivity of ZnO. The chemical nature of them and the mechanism of sensitization are discussed.
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