Sensitivity to crystal stacking in low-energy electron microscopy

Abstract

In this work we demonstrate the general characteristics of hcp and fcc stacking in low-energy electron reflectivity for transition metal surfaces, by following the restacking during homoepitaxial growth in real-time. For this purpose, the stacking of a model system, single-crystalline Ag islands during layer-by-layer growth at high temperature on O/W(110), is chosen. Multiple scattering calculations are used to model the relation between electron reflectivity and the crystal geometry. The changes in the electron reflectivity are shown to derive from the changes in the stacking sequence of the topmost surface layers. The results allow to distinguish between the hcp and fcc crystalline arrangements at a surface based on typical differences in the reflectivity curves, making the Ag results relevant for a variety of materials with hexagonal surface geometry. In particular, the multiplet structure within the first Bragg peak in the very low electron energy regime is identified with the fcc structure and thus it can be utilized as a fingerprint to determine the stacking sequence.