Abstract
Epitaxial 4H-SiC graphene films for use in ambient gas sensing are fabricated and tested. The sensitivity response to nitrogen dioxide is optimized by varying both operation temperatures and humidity. A relative resistance change response of ${-}{45\%}$ is obtained upon application of elevated temperatures and a gas mixture containing ${\rm NO}_{2}$ at a concentration of 10 parts per billion (10 ppb). The sensitivity response increased linearly with ${\rm NO}_{2}$ concentration, reaching ${-}{60\%}$ at a concentration of 250 ppb, followed by saturation at 1 part per million (ppm) level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Instrumentation and Measurement
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
