Abstract
A new algorithm for the variable angle of incidence spectroscopic ellipsometry (VASE) data interpretation for an inhomogeneous compound or composite layers whose composition varies in depth is developed. The numerical experiments are performed on the determination of compositional profiles of very thin graded interfaces in Al x Ga 1- x As-GaAs heterostructures from VASE data. It is demonstrated that the new algorithm, utilizing the sensitivity of the ellipsometry to optical characteristics of the compositionally graded surface layers, gives a possibility for accurate determination of the thickness and the compositional profiles of thin graded band-gap layers and interfaces.
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