Abstract
The doping sensitivity functions provide a powerful tool to analyze the effects of doping variations on the parameters of power semiconductor devices. They can be coupled with gradient-based optimization algorithms to design the doping profiles in power devices and are instrumental in the statistical analysis of these devices. In this article we discuss about applications of the doping sensitivity functions in power devices. We focus mostly on maximizing the breakdown voltage and minimizing the on-state resistance and on the numerical evaluation of the acceptor and donor sensitivity functions of the breakdown voltage. Simulation results are presented and analyzed for a standard insulated gate bipolar transistor.
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