Abstract
The sensitivity of polycrystalline HgI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (poly-HgI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) X-ray detector is determined. A generalized expression for charge carrier transport and absorption-limited sensitivity of X-ray photoconductors is derived by analytically solving the continuity equation for both holes and electrons considering the drift of electrons and holes in the presence of deep traps. Sensitivity is studied as a function of varying applied electric field across the photoconductor for both positive and negative bias under mammographic condition. The theoretical model is fitted to the published results for physical vapor deposited (PVD) poly-HgI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> mammographic detector. The fitted values of the electron and hole ranges are 1.6896 × 10( <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−5</sup> )cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup> and 5.916 × 10( <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−6</sup> )cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−6</sup> respectively. Concentration of deep trap for electrons and holes were found out to be 2.6082 × 1013/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> and 3.3806 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> respectively . Effect of decreasing electron and hole lifetime on sensitivity is studied for varying detector thickness for positive bias under mammmographic condition. Under these conditions, deteriorating hole lifetime has much more impact on sensitivity than deteriorating electron lifetime. Presence of an optimum detector thickness has been found at low hole lifetime
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
