Abstract
We analyzed the sensitivity of scanning microwave microscopy (SMM) for doping concentration measurements in n-type Si based on the conventional equivalent-circuit model combined with numerical simulations of carrier distributions in metal-oxide-semiconductor capacitors. The minimum detectable change in capacitance was estimated to be 0.26 aF for the amplitude of the applied 17 GHz microwave voltage of 0.3 V. Possible measurable range of electron concentrations in Si was found to be 1015–1020 cm−3 with ∼10%–1% accuracy by using nano-scale flat-shaped tips for SMM measurements.
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