Abstract
The non-uniformity is a major issue in large area IR detector arrays of HgCdTe. The source of this non-uniformity is the variations in material and device parameters. Out of all the parameters, some have large impact on the performance and need to be controlled tightly. Here we present the effect of variations in the various device and material parameters on the performance of MWIR photodiodes of HgCdTe. However, the method is applicable to other types as well. We also show the relative impact of these parameters on the device performance by using the sensitivity analysis.
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