Abstract
The electrostatic doping technique has a remarkable ability to reduce random dopant fluctuations (RDFs), fabrication complexity and high thermal budget requirement in the fabrication process of nano-scale devices. In this paper, for the first time it has been propose and simulated a junction-free electrostatically doped tunnel field-effect transistor (JF-ED-TFET) based biosensor for label-free biosensing applications. The dielectric modulation concept has been used to sense biomolecules using a nano-cavity incorporated within the gate oxide layer near to the source end. The sensing response of the JF-ED-TFET biosensor has been analyzed in terms of the electric field, energy band and transfer characteristic and sensitivity in terms of ON-current, ION/IOFF ratio and subthreshold swing. The sensitivity of the biosensor has been investigated based on practical challenges such as different filling factors and step-profiles generated from the steric hindrance. The effect of temperate and nano-cavity dimension variations on device performance has been also analyzed. In this work, various types of biomolecules such as Streptavidin (k = 2.1), Ferro-cytochrome c (k = 4.7), keratin (k = 8) and Gelatin (k = 12) has been considered for the performance investigation.
Highlights
The precise identity of biomolecules species and analyze their properties are very important for disease assessment and treatment
The variations of JF-ED-TFET biosensor characteristics due to immobilization of biomolecules in nano-cavity region with different dielectric constants and charge densities have studied
Analyze results shows that the JFED-TFET biosensor can be used for intuitive examination for charged or neutral biomolecules with different dielectric constant
Summary
The precise identity of biomolecules species and analyze their properties are very important for disease assessment and treatment. For labelfree detection of biomolecules, the FET-based biosensors played a very important role due to its cost-effective manufacturing, low power consumption and scalable properties [5,6,7,8]. For avoiding ISFET biosensors limitation, dielectric modulated-FET (DM-FET) biosensors are proposed and DM-FET biosensors can detect the charged (e.g., DNA biomolecules) and non-charged (e.g.,biotinstrept-avidin) biomolecules effectively [10]. DMFET biosensor is designed by incorporating the nano-cavity into gate dielectric material of conventional MOSFET. Thereafter MOSFET-based biosensors attract the attention of researchers by the ability of high ON-current comparatively to conventional FET based biosensor [13]. By continually narrowing the dimensions beyond the limit, the MOSFET device generates unavoidable issue as SCE (short channel effect), high OFF-state power consumption, poor control over the channel, quantum ef-
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