Abstract
In this work, a sensitivity study of the Boltzmann equation describing electron transport in one-dimensional Silicon diodes is performed. We focus on the variability of the model outputs according to the variability of input parameters connected to the geometry, temperature and doping concentration of the device. A number of numerical experiments exploiting the Boltzmann Monte Carlo method have been carried out to compute global sensitivity measures. The most popular variance-based sensitivity analysis approaches, such as the Sobol method and Fourier Amplitude Sensitivity Test (FAST), have been applied. First-order and total sensitivity indices in the context of FAST and Sobol methods have been computed. Furthermore, in order to estimate the interaction effects, the calculation of higher-order sensitivity indices have been performed. Based on the numerical results, we are able to classify the inputs according to their influence over the output variability. This allows a systematic approach to give physical interpretations and insights on the design parameters of a diode, which is hardly accessible otherwise.
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