Sensitive Site-Specific Dopant Mapping in Scanning Electron Microscopy on Specimens Prepared by Low Energy Ar+ Ion Milling

Abstract

Highly sensitive dopant mapping has been demonstrated in secondary electron imaging on an InP sample prepared by low energy Ar+ ion milling for site-specific analysis. Dopant contrast as high as that of a cleaved surface was observed from the sample prepared by 1.5 keV milling. This indicates that low energy milling generates little damaged surfaces for site-specific dopant mapping. Thus, the production of semiconductors cross-sections using low energy milling can provide quick and sensitive site-specific dopant mapping, and extend the application of scanning electron microscopy (SEM) dopant mapping to the examination of nanometer-scale device structures for which site selection is essential.