Abstract
The usefulness of InGaAs/InP heterostructures for magnetic field sensor applications has been studied. Basic parameters of the Hall and magnetoresistive devices have been determined. Magnetic field sensitivities in a wide temperature range from 3.5 K to 300 K for layers with different carrier concentration from 2 � 1020 m−3 to 8 � 1023 m–3 have been measured. It is concluded that optimized lattice-matched InGaAs/InP heterostructures can be used as very sensitive magnetic field sensors. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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