Abstract
Photomultipliers, solid state photodiodes and avalanche photodiodes are the preferred detectors for the demodulation of light intensity variations at visible and near infrared wavelengths. The principles of operation of these detectors will be described together with their basic construction and operational characteristics. Photomultipliers with the recently developed high efficiency photocathodes for visible and near infrared wavelengths and the high gain dynode arrangements with fast speed of response will be mentioned. The various types of silicon and germanium photodiodes with and without internal current gain will be discussed. Tradeoffs involved in the optimization of quantum efficiency, speed of response, internal current gain and sensitivity to weak light signals will be treated in detail for silicon photodiodes operating at wavelengths either in the visible or at the GaAs (≈0.7–0.9 μm) or YAG (1.06 μm) infrared laser emission lines. The capabilities of germanium avalanche photodiodes for the detection of infrared light at wavelengths up to about 1.6 μm will be mentioned.
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