Abstract
KTa1−xNbxO3 (KTN) is well-known as a crystal having very large EO coefficients. High-quality KTN crystal growth technology has been recently developed, and several applications of KTN are being investigated. We tried to use KTN to make an electric field sensor and, studied its electro-optic properties for this purpose. The modulation depth of the sensor was about 20 times deeper than that of the ZnTe sensor used in our previous system in the frequency range from DC to 1.5MHz.
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