Abstract
AbstractPhotoconductive cold cathode X‐ray detectors are highly promising for use in medical diagnosis, industrial inspection, and scientific research applications. However, development of highly sensitive, fast, and stable direct conversion X‐ray detectors remains very challenging because of structural and material limitations. This article presents a direct conversion X‐ray detector based on a HgI2 crystal and a ZnO nanowire vacuum diode with sensitivity of 6.8 × 103 µCGyair−1 cm−2, which is nearly two orders of magnitude higher than that of a commercial a‐Se X‐ray detector. The X‐ray detector, which uses a high‐crystallization HgI2 photoconductor, shows a response time of 0.24 ms, thus significantly outperforming the polycrystalline HgI2 X‐ray detector. In addition, the current limitation between the HgI2 photoconductor and the ZnO nanowire cold cathodes guaranteed device reliability under high applied electric fields for practical applications. The findings presented in this work demonstrate that the proposed X‐ray detector based on the HgI2 photoconductor and the ZnO nanowire vacuum diode is highly efficient and stable.
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