Abstract

NiO-loaded SnO2 powders were prepared involving two chemical procedures. The mesoporous SnO2 support was synthesized by a hydrothermal route using Brij 35 non-ionic surfactant as a template. The nickel loadings of 1 and 10 wt.%. NiO were deposited by the wet impregnation method. The H2S sensing properties of xNiO-(1-x)SnO2 (x = 0, 1, 10%) thick layers deposited onto commercial substrates have been investigated with respect to different potential interfering gases (NO2, CO, CO2, CH4, NH3 and SO2) over a wide range of operating temperatures and relative humidity specific for in-field conditions. Following the correlation of the sensing results with the morphological ones, 1wt.% NiO/SnO2 was selected for simultaneous electrical resistance and work function investigations. The purpose was to depict the sensing mechanism by splitting between specific changes over the electron affinity induced by the surface coverage with hydroxyl dipoles and over the band bending induced by the variable surface charge under H2S exposure. Thus, it was found that different gas-interaction partners are dependent upon the amount of H2S, mirrored through the threshold value of 5 ppm H2S, which from an applicative point of view, represents the lower limit of health effects, an eight-hour TWA.

Highlights

  • Semiconducting metal oxide (SMOX)-based gas sensors are one of the widest spread devices for the detection of different explosive and toxic gases, mainly due to their high sensitivity and low manufacturing costs [1]

  • An operating temperature screening was performed in order to establish the electrical resistance behavior of said materials, relative to the amount (%)

  • It was possible to identify the role of NiO loading over the RH influence for the whole range of operating temperatures

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Summary

Introduction

Semiconducting metal oxide (SMOX)-based gas sensors are one of the widest spread devices for the detection of different explosive and toxic gases, mainly due to their high sensitivity and low manufacturing costs [1]. Properties such as sensitivity and selectivity should be enhanced to boost the potential development. One of the most important aspects in preparing a heterojunction resides in the inner electrical properties of the materials involved, ready to take part in an equilibrium process after the junction. A potential barrier will be formed at the interface between the involved SMOX materials. The appearance of either oxidizing or reducing gases in the surrounding atmosphere will lead to the modulation of the p−n junction directly reflected in the sensor signal of the heterojunction materials [3]

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