Abstract
In this study, indium-gallium-zinc-oxide (IGZO) thin films were investigated for detection of Nitrogen Dioxide (NO2) gas. IGZO films with a thickness range of 25–100 nm were deposited using IGZO (ZnO: Ga2O3:In2O3 = 1:1:1 mol.%) polycrystalline target on interdigitated Au electrode alumina substrates and annealed in different annealing atmosphere of Nitrogen (N2) and Oxygen (O2). The effects of the IGZO thickness and different annealing ambient on IGZO were investigated on sensing properties. The N2 ambient showed a superior response (S = Rgas/Rair) compared to O2 annealing by a factor of 2.3 times. In addition, the sensor response increases with film thickness up to 25 nm and decreases with an increase in thickness. The sensor showed a high response for the IGZO thin film (25 nm), which was 519 times that of the other sensors at 200 °C. The sensor recovery and response time improved, and the sensor selectivity was tested under different gases.
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