Abstract
Junction temperature sensing requirements for fast MOSFET junction temperature control and high power fast switching power converter protection are not easily met with non-intrusive techniques. This paper presents a non-invasive circuit model-based sensing method suitable for a high bandwidth, hard-switching converter power MOSFET junction temperature estimation without any additional temperature detector. For the purpose of demonstrating MOSFET junction temperature sensing, a chopper circuit is used. The ringing superimposed with a circuit load current is used for MOSFET junction temperature estimation. A `gate drive-RDS-on-L-C' resonant model is implemented indicating the mechanism of power MOSFET turn-on dynamics. Modeling includes the gate-drive output parasitics, power MOSFET intrinsic parameters, PCB parasitics and load parasitics. To evaluate the methodology, LTSpice Simulation and experimental results are studied.
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