Abstract
The demand for sensors in response to oxygen partial pressure in air is increasingly high in recent years and small-size sensors on a micrometer scale and even a nanometer scale are particularly desirable. In this paper, the sensing of oxygen partial pressure in air was realized by a solution-processed ZnO nanoparticle (NP). Thin-film ZnO NP was prepared by spin-coating and a highly sensitive sensor was then fabricated. The oxygen sensing performance was characterized in air and compared with that in nitrogen, which showed an increase in electrical conductance by more than 100 times as a result of decreasing oxygen partial pressure from 103 mBar to 10−5 mBar. Moreover, higher sensitivity was achieved by increasing the annealing temperature and the effect of thermal annealing was also investigated. Furthermore, ZnO NP lines with 7 μm in width were successfully patterned with low cost by a mould-guided drying technique from ZnO NP dispersion, which makes ZnO NP extremely promising for miniaturized and integrated sensing applications.
Highlights
Oxygen gas sensing technology has progressed significantly over the last century and it has been extensively used in various areas such as environmental pollution control [1], physiological process analysis [2,3], health and safety monitoring, etc. [4,5]
The preparation and characterization of ZnO NPfilms thin were discussed in Section which 2, is followed the fabrication and process sensing performance films first were first discussed in 2, Section which is by followed by the process fabrication and sensing of
Highlysensitive sensitiveoxygen oxygenpartial partialpressure pressure sensor based presented in paper
Summary
Oxygen gas sensing technology has progressed significantly over the last century and it has been extensively used in various areas such as environmental pollution control [1], physiological process analysis [2,3], health and safety monitoring, etc. [4,5]. °C for 3 h on awas glass substrate) was limited increase in electrical resistance of less than. Bar to reported to have a limited increase in electrical resistance of less than 10% when the air pressure was. ZnO-based were used for nanowire produced byZnO chemical vapor deposition wasby utilized in avapor field-effect transistor oxygen sensing.(NW). Produced chemical deposition was for oxygen sensing and the maximum variation in electrical conductance was. Under the gate utilized in a field-effect transistor for oxygen sensing and the maximum variation in electrical
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