Abstract
In this work, nanograined ZnO films with various CuO contents (between 2at% and 10at%) were synthesized by pulsed-laser deposition method. The films with (2, 4, and 6at%) contain only ZnO peaks with wurtzite structure. The peaks at the CuO (with cubic lattice) become visible in the X-ray diffraction spectra at (8 and 10at%). Also, the X-ray diffraction patterns of porous silicon showed a broadening in the FHWM with increasing etching time. From atomic force microscopy of the prepared samples, a decrease in the average diameter of the particles with increasing etching time was observed. The photoluminescence spectroscopy showed that the blue shift was increased with etching time. We have studied the operation temperature of gas sensors fabricated from the prepared samples at different environment temperatures and found that the maximum sensitivity was about 75.88 for 10min porous silicon time.
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