SEM-mapped micro-photoluminescence studies of highly luminescent micro-clusters in erbium-doped silicon-rich silicon oxide

Abstract

Abstract This paper reports on the formation of unique micrometer-scale clusters in erbium-doped silicon-rich silicon oxide (ErSRSO) thin films produced by thermal evaporation. Through scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX), we identify these micro-clusters as structures where the film curves away from the substrate to encase erbium-rich aggregates. Even though erbium aggregation has been reported to cause quenching, we demonstrate that the micro-clusters as a whole can exhibit significantly enhanced erbium photoluminescence (PL), with emissions over 24 times brighter than the surrounding non-cluster region. Mapping micro-photoluminescence measurements onto SEM images reveals that the erbium aggregates alone do not generate the enhanced PL, but rather the thin film encasing the aggregates is the origin of the emissions. Analysis of the PL Stark splitting shows a correlation between the micro-clusters’ fine structure and the strength of their PL. Taken together, the above evidence indicates that the micro-clusters’ strong PL is produced by changes in the local environment of the Er 3+ inside the thin film surrounding the erbium-rich aggregates.