Abstract

We will present efficient semi-transparent bulk-heterojunction [regioregular of poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester] solar cells with an inverted device architecture. Highly transparent ZnO and TiO2 films prepared by Atomic Layer Deposition are used as cathode interlayers on top of ITO. The topanode consists of a RF-sputtered ITO layer. To avoid damage due to the plasma deposition of this layer, a sputtering buffer layer of MoO3 is used as protection. This concept allows for devices with a transmissivity higher than 60 % for wavelengths 650 nm. The thickness of the MoO3 buffer has been varied in order to study its effect on the electrical properties of the solar cell and its ability to prevent possible damage to the organic active layers upon ITO deposition. Without this buffer or for thin buffers it has been found that device performance is very poor concerning the leakage current, the fill factor, the short circuit current and the power conversion efficiencies. As a reference inverted solar cells with a metal electrode (Al) instead of the ITO-top contact are used. The variation between the PCE of top versus conventional illumination of the semi-transparent cells was also examined and will be interpreted in view of the results of the optical simulation of the dielectric device stack with and without reflection top electrode. Power conversion efficiencies of 2-3 % for the opaque inverted solar cells and 1.5-2.5 % for the semi-transparent devices were obtained under an AM1.5G illumination.

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