Semi‐insulating CdTe with a minimum deep level doping

Abstract

Quasichemical formalism is used to study self-compensation and reactions of point defects during annealing and successive cooling with aim to find a technique to prepare semi-insulating CdTe (SICT) with minimized deep level doping. We present a theoretical model which provides SICT also in 7N or less purity material with deep level density below the limit 1013 cm–3 which is demanded for detector grade CdTe. The principle of the method is based on a proper thermal treatment with the low temperature dwell and the defect reaction between shallow acceptor Cd vacancies and shallow donor Te antisite. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)