Abstract
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si- n+ structures, and have also developed an analytical model for their electrical characteristics. When the char- acteristic curves are plotted in the current-voltage (I-V) domain a high variability is observed. In spite of that, when the same curves are plotted in the charge-flux domain (Q-), they can be described by a simple model containing only three parameters: the charge (Qrst) and the flux (rst) at the reset point, and an exponent, n, relating the charge and the flux before the reset transition. The three parame- ters can be easily extracted from the Q- plots. There is a strong correlation between these three parameters, the origin of which is still under study.
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