Abstract
The molecular beam epitaxy growth of bump-free indium antimonide-bismide (InSbBi) necessitates precise control of group III and V stoichiometry, as well as the growth temperature and rate. In this research, we propose a semi-empirical growth model approach to enhance our understanding of the involved growth kinetics and predict the bismuth (Bi) content and surface quality of InSbBi films. The model combines the impact of growth rate and the maximum incorporation rate of Bi on the Bi content of InSbBi. Our findings indicate that bump-free InSbBi requires a minimum Bi incorporation rate to Bi adatoms arrival rate (or Bi flux) ratio of 0.96, which closely approaches the ideal value of 1.0. By employing this growth model, we can optimize the growth conditions for achieving high-quality InSbBi films with controlled Bi content.
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