Abstract

ABSTRACT Organic field-effect transistors (OFETs) have been the hotspot in information science for many years as the most fundamental building blocks for state-of-the-art organic electronics. During the field-effect modulation of the semiconducting channel, the gate dielectric always has a significant influence on the charge transport behaviours. Hence, understanding of the nature of charge carriers at the semiconductor/dielectric interface and realizing functional OFETs with superior performance have been the cornerstones for the sustainable advancement in organic electronics. With the joint efforts of predecessors, various basic theories and models have been advanced to describe the charge transport processes in organic crystals. To make a further breakthrough, more accurate correlation between the electrostatic properties of dielectrics and charge carrier behaviours is urgently needed. The high-quality interface-like films, without nonideal factors, two-dimensional molecular crystals (2DMCs), have been spotted as a powerful platform for direct and accurate characterization of the intrinsic charge transport behaviours at the semiconductor/dielectric interface. In this article, the recent breakthroughs in the physics of charge transport, interfacial effects, and perspectives with 2DMCs in OFETs are reviewed, providing great benefits to penetrate the fundamental studies and keep up with the revolutionary advancement in organic-electronics road map.

Highlights

  • During the field-effect modulation of the semiconducting channel, the gate dielectric always has a significant influence on the charge transport behaviours

  • Understanding of the nature of charge carriers at the semiconductor/dielectric interface is of great importance for clarifying the structureproperty relationships and achieving high-performance Organic field-effect transistors (OFETs) devices, which have been the cornerstones for the sustainable advancement in organic electronics [20–23]

  • In OFETs, not all the charges induced by the gate field contribute to the current flow, for some of the mobile charges can be momentarily trapped by shallow traps; the number of these charges depends on the density of shallow traps and temperature

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Summary

Introduction

Starting with the discovery of the semiconducting nature of organic compounds in 1954, the interests in organic semiconductors are undergoing a sustainable growth [1–4]. In the ultrathin high-quality crystalline films, the charge traps are largely reduced and the interlayer screening that commonly exists in the 3D bulk organic semiconducting crystals is effectively eliminated. Under such 2D limit, we can pursue an overall. ADVANCES IN PHYSICS: X consideration of the electrostatic properties of the dielectrics, the molecular packing of the interfacial organic layer, and the interaction with the electronic states at the interface Based on such intrinsic platform, the motion of charge carriers at the semiconductor/dielectric interface can be directly explored. This review aims to further elucidate interface physics, thereby providing guidelines to improve the performance of devices and advance their practical applications

Overview of charge transport in OFETs
Disorder models
Hopping rates and density of states
Gaussian disorder model
Variable-range hopping Because the hopping rates given by Miller–Abrahams and
Multiple trapping and release
Polaron-correlated charge transport in OFETs
Classical small polaron models
Polarons at semiconductor/dielectric interface in OFETs
Dynamic disorder
Examinations and explorations of interfacial effects using 2DMCs
Modulations of interactions at semiconductor/dielectric interfaces
Structure-related charge transport properties
Interfacial templating effect
Conclusion and outlook
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