Abstract
Abstract The paper describes how electrical properties of Pt/InP Schottky diode were affected by semiconductor type. We fabricated Pt/p-InP and Pt/n-InP Schottky diodes and measured electrical characteristics from 20 K to 400 K. Thicknesses of less than 30 nm of platinum were deposited on the two types of indium phosphide substrates using magnetron sputtering technique after the creation of Zn-Au ohmic back contact. We discussed basic diode parameters of idealiy factors, barrier heights and serries resistances of the two type of contacts. Additionly, unusual temperature characteristics of the the diodes were highlighted. These results were evaluated in terms of semiconductor type comparision of Pt/InP Schottky structures.
Highlights
The preferred material and technique is mostly effective in the forming of semiconductor devices
Magnetron sputtering technique is generally used for controlling the thickness distribution and obtaining high rate of uniform surfaces
Reverse currents behaviour of Pt/p-InP Schottky diode is very extraordinary as seen in Ellipse (E1)
Summary
The preferred material and technique is mostly effective in the forming of semiconductor devices. Siad et al studied series resistance and diode parameter differences between Al/n-Si and Al/p-Si Schottky contacts [4]. Pt/p-InP Schottky contact had high quality rectifying behaviour in all temperature conditions. Ellipse 1 (E1) explains reverse current features of Pt/p-InP Schottky contacts in low temperature region.
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