Abstract
Semiconductor circular ring lasers have attracted quite much attention because of the higher side-mode suppression ratio and the versatility of integration with other components. In order to reduce the scattering loss in the curved waveguide of such a ring laser, the etched wall of the waveguide ridge must be highly vertical and smooth. In this paper, we present the results of our GaAs-AlGaAs quantum well circular ring lasers which were etched with the UV laser-assisted cryo-etching technique.
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