Abstract
In this article, we focus on using the multiexciton generation (MEG) effect of quantum dot (QD) to realize quantum cutting of high-energy photons which will give rise to a remarkable increase of total photon number. To avoid the complicated solving of Schrodinger equation, we take approximations and develop a method for fast evaluating the quantum efficiency of MEG process. On this basis, we calculate the detailed balance limit of efficiency of Si single-junction solar cell with Si QD-doped glass placed on top of it as a spectral converter layer. It shows that the efficiency will reach 36 % which is 6 % higher than that without the converter layer. We have also explored the influence of QD radius, QD-doping density, QD, and host material, device working temperature on the efficiency.
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