Abstract
For the first time, the electro-optical properties of nontetrahedrally bonded crystalline and amorphous polyphosphides have been investigated. The crystalline archetype KP15 is a high resistivity semiconductor, with photoconductivity and photoluminescence at the band gap (1.7 eV). These measurements are extended to amorphous films prepared by vapor transport methods. The resistivity of the films has been varied over eight orders of magnitude by the incorporation of 0%–2% Ni. Nonlinear metal-semiconductor behavior with good current carrying capability (1 A/cm2) has been observed. When deposited on InP, the films reduce the density of surface states in metal-insulator-semiconductor diodes to ∼1010/cm2 eV, probably by providing continuity to the group V element at the interface. It is concluded that the low crystal symmetry of polyphosphides leads to a significant new amorphous semiconductor in which the electronic coherence length is commensurate with the intermediate range order.
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