Abstract
The semiconductor properties of anodic oxide film formed on commercial pure aluminum were analyzed using Mott-Schottky theory and point defect model (PDM). The donor density, oxygen vacancy diffusion coefficient and flat-band potential were measured for the oxide films sealed by boiling water and K2Cr2O7, respectively. The results indicated that the anodic oxide films showed the n-type semiconductor property and the donor density decreased exponentially with the voltage elevating. The value of oxygen vacancy diffusion coefficient is about (1.12-5.53)×10-14 cm-2·s-1. The flat-band potential of anodic oxide film declined after sealing.
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