Abstract
ABSTRACTPlasma etching of GaAs and InP using a CH4/H2 process gas and AlxGa1−xAs using a SiCl4 plasma are reported. Particular attention to etching characteristics as a function of gas and material composition, r.f. power, pressure and temperature are shown. Etching of GaAs and InP highlight two separate etching mechanisms. Surface roughness data at the etched surface is presented and Cl and CH4/H2 process chemistries are compared which shows the latter to yield significant improvements in etch surface characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
