Abstract
A new method for measuring neutron fluences has been developed which consists of detecting induced-electrical changes due to self-ionization from radioactive decay in neutron-irradiated semiconductors. Detectors utilizing these phenomena would be operative following an exposure to a neutron environment. Effects associated with radiation damage can be minimized by annealing the detectors before measuring electrical changes associated with radioactive decay. Neutron spectroscopy can be performed by using materials with different neutron-reaction cross sections. Detectors can be either homogeneous devices or junction devices and can be operated in modes to detect either individual pulses (radioactive decays) or integrated-pulse effects. Particular emphasis is given to detectors which are homogeneous devices operating in the pulse-integrating (induced conductivity) mode. High-resistivity semiconductors with large mobility-lifetime products are ideally suited for such detectors. This particular mode of operation has been demonstrated using CdS detectors exposed to fast-neutron fluences varying from 10 11–10 17 neutrons/cm 2.
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