Abstract
Heterogeneous integration between silicon (Si), III-V group material and Germanium (Ge) is highly desirable to achieve monolithic photonic circuits. Transfer-printing and stacking between different semiconductor nanomembranes (NMs) enables more versatile combinations to realize high-performance light-emitting and photodetecting devices. In this paper, lasers, including vertical and edge-emitting structures, flexible light-emitting diode, photodetectors at visible and infrared wavelengths, as well as flexible photodetectors, are reviewed to demonstrate that the transfer-printed semiconductor nanomembrane stacked layers have a large variety of applications in integrated optoelectronic systems.
Highlights
IntroductionThe applications of semiconductor nanomembrane (NM) transfer technology both in electronic and photonics have attracted intensive attention and research interests [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24]
The two most attractive characteristics of this semiconductor NM are: (1) flexibility, as the semiconductor material is stretchable or bendable when in the form of thin layer, which is a highly desired mechanical property for flexible optoelectronic devices; (2) transferability to a variety of foreign substrates, without the limitation by different materials’ growths condition and lattice mismatch; heterogeneous integration could be formed between various combinations of materials to serve a multi-functional and versatile purpose
According to the study that the Raman peak shift is related to the mobility improvement of pentacene [58,59], this photocurrent enhancement under the bending condition could be explained by the mobility improvement, given that tensile strain on the crystal lattice could increase the carriers’
Summary
The applications of semiconductor nanomembrane (NM) transfer technology both in electronic and photonics have attracted intensive attention and research interests [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24]. Pioneered by Rogers et al, a polydimethylsiloxane (PDMS) stamp-assisted transfer printing process has been used to transfer a variety of crystalline semiconductor NMs on different foreign host substrates. This heterogeneous materials stack could be integrated with Si and flexible substrate applications [25,26,27,28,29,30,31,32,33]. Transfer the NMs to a new host: (1) direct flip transfer; (2) stamp-assisted transfer; and (3) transfer transfer the NMs to a new host: (1) direct flip transfer; (2) stamp-assisted transfer; and (3) transfer printing without an adhesive layer, depicted in Figure 1e–g, respectively. Photodetectors [25,41,42,43] and light-emitting diodes (LEDs) [44] by transfer printing a very thin membrane layer onto a plastic substrate
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