Abstract
A high-power monolithically-integrated master oscillator/electroabsorption modulator/power amplifier semiconductor laser is demonstrated. The device emits >1 W output beam power. Extinction ratios of –15 dB are obtained with a 2.9 V reverse bias voltage on the electroabsorption modulator. The 3 dB small signal modulation bandwidth is as high as 5 GHz. High-power diffraction-limited semiconductor laser sources with high-speed modulation capability are very desirable for applications such as intersatellite space telecommunications.
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