Abstract
AbstractOptoelectronic devices are important for laser modulators and Q‐switches as well as in optical communication and network systems where all optical switching is required. The development of II–VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p–i–n structures where the i‐region is a set of quantum wells is reviewed. In particular, the characterisation of ZnSe/ZnCdSe/ZnSe devices is discussed.
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