Semiconductor-metal transition in TlPbF3 under isotropic pressure and its impact on optical, elastic and mechanical properties: A DFT computation with HSE06

Abstract

Abstract This research aims to comprehensively evaluate the structure, elasticity, mechanics, anisotropy, electrical properties, and optical attributes of TlPbF3 at pressures from 0 to 60 GPa. A cubic structure of the material remains same without any phase changes, but there is a reduction in the lattice parameters. The material is determined to be mechanically secure by doing calculations on a variety of mechanical and elastic characteristics, including bulk, shear, and Young's modulus, stiff, and not particularly flexible. It also shows a significant resistance to shear force. The material's ability to withstand high pressures, its metallic bond nature, and ductility have been shown by the Kleinman's parameter, Poisson's ratio, Cauchy pressure, and Pugh ratio. Anisotropy can be confirmed by activating specific anisotropy factors. When we consider the electronic band structure, we observe a transition from a broad gap in the band (3.719 eV) comparable with a small band distance (0.65 eV), and converts to a metal (0 eV). To explore this, we have estimated the total, partial and elemental partial density of states. Additionally, we have computed the real and imaginary functions of dielectric, absorption factor, refractive index, extinction coefficient, loss function, reflectivity and real/imaginary conductivity to assess the material's applicability. As pressure is applied, the static values of ε1(⍵) and n(⍵) increase. This material is also well-suited for optoelectronic devices due to its high conductivity, reflectivity, absorption, and refractive index.