Abstract
Semiconductor light sources for applications in the field of optical communications and optical signal processing are considered. From the basic principles of heterojunctions in III/V compound semiconductors the operation principles and characteristics of light emitting diodes, superluminescent diodes and laser diodes are presented. The technology of the devices, made in AIGaAs/GaAs and InGaAsP/InP is described and the lateral wave confinement by gain- or indexguided structures is discussed. The devices for achieving the single longitudinal mode operation with a high spectral purity, such as distributed feedback (DFB) and distributed Bragg reflector (DBR) laser diodes are presented. The influence of the laser structure and the relevant device parameters on the performance is studied and the improvement by using quantum well structures is demonstrated. An outlook towards advanced laser structures includes recent progress on electronically wavelength tunable laser diodes.
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