Abstract
A transient thermal technique is used to test the difference in the crystalline structure of silicon wafer and silicon polycrystal. Short duration joule heat pulse (3 s, 120 w) was used to monitor the transient heat dissipation through the silicon wafer. The temperature decay was recorded. The results showed that single crystal silicon is different from the polycrystalline in their thermal response to heat pulses. For wafers made of single crystal silicon, the (111) showed a response which depend on the surface finish. Heat transfer between the silicon wafer and the sensor head contacting the wafer surface could be used to monitor the quality of the transistor piece. This monitoring system is simple, fast and is in situ non-destructive testing technique.
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